shantou huashan electronic devices co.,ltd . n-channel enhancement mode field effect transistor applications ? portable equipment. ? lcd display inverter. ? dc/dc converters ? other switching applications. features ? 50a, 30v(see note), r ds (on) < 6.6mv ? @v gs = 10 v ? fast switching ? 100% avalanche tested ? minimize input capaci tance and gate charge ? equivalent type:me70n03 maximum ratings ta=25 unless otherwise specified t stg storage temperature ------------------------------------------------------ - 55~150 t j operating junction temperature -------------------------------------------------- 150 v dss drain-source voltage ----------------------------------------------------------30v v gss gate-source voltage --------------------------------------------------------------------------- 20v i d drain current (continuous)(t c =25 ) ----------------------------------------------------------- 50a i dm pulsed drain current (note 1)----------- ------------------------------------------------------ 100a p d maximum power dissipation (t c =25 ) ------------------------------------------------------ 40w e as pulsed avalanche energy(l=0.5mh, rg=25 ? ) -------------------------------------------- 115mj rthj-case thermal resistance junction-case -----------------------------------------------------20 /w HFU70N03V 1- g 2-d 3-s to-251
shantou huashan electronic devices co.,ltd . electrical characteristics ta=25 unless otherwise specified symbol items min. typ. max. unit conditions off characteristics bv dss drain-source breakdown voltage 30 v i d =250 a ,v gs =0v i dss zero gate voltage drain current 1 a v ds =30v, v gs =0v i gss gate ? body leakage 100 na v gs = 20v , v ds =0v on characteristics v gs(th) gate threshold voltage 1.0 3.0 v v ds = v gs , i d =250 a 5.5 6.6 m ? v gs =10v, i d =30a (note 2) r ds(on) static drain-source on-resistance 8.5 11 m ? v gs =4.5v, i d =15a (note 2) dynamic characteri stics and switching characteristics ciss input capacitance 1640 pf coss output capacitance 260 pf crss reverse transfer capacitance 84 pf v ds = 15v, v gs = 0v, f = 1.0 mhz t d(on) turn - on delay time 19 ns tr rise time 15 ns t d(off) turn - off delay time 54 ns t f fall time 6.5 ns v ds = 15v, v gs = 10 v, r l =15 ,r g = 3 ? (note 2) qg total gate charge 8.7 nc qgs gate?source charge 4.4 nc qgd gate?drain charge 3.6 nc v ds =15v, id =25 a, v gs = 4.5v (note 2) rg gate resistance 0.9 ? f=1mhz drain-source diode charact eristics and maximun ratings i s continuous source?drain diode forward current 20 a i sm pulsed drain-source diode forward current 40 a v sd source?drain diode forward on?voltage 0.85 1.2 v i s =20a,v gs =0(note 2) notes: 1. repetitive rating: pulse width limited by maximum junction temperature 2. pulse test: pulse width 300 s, duty cycle 2% HFU70N03V
shantou huashan electronic devices co.,ltd . typical characteristics HFU70N03V
shantou huashan electronic devices co.,ltd . typical characteristics hfu70n03
shantou huashan electronic devices co.,ltd . typical characteristics HFU70N03V
shantou huashan electronic devices co.,ltd . typical characteristics HFU70N03V
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